STUDY OF THE SYNTHESIS AND FIELD EMISSION CHARACTERISTICS OF ONE-DIMENSIONALGaNNANOSTRUCTURES

Enling Li (), Tao Zhao, Danna Zhao, Zhen Cui and Mancang Liu
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Enling Li: Science School, Xi'an University of Technology, Xi'an 710048, China
Tao Zhao: Science School, Xi'an University of Technology, Xi'an 710048, China
Danna Zhao: Science School, Xi'an University of Technology, Xi'an 710048, China
Zhen Cui: Science School, Xi'an University of Technology, Xi'an 710048, China
Mancang Liu: Science School, Xi'an University of Technology, Xi'an 710048, China

Surface Review and Letters (SRL), 2012, vol. 19, issue 02, 1-5

Abstract: The chemical vapor deposition (CVD) process has been used to synthesize gallium nitride (GaN) nanostructures usingPt-coatedn-typeSi(100)as the substrate, andNH3gas andGa2O3powder as the reaction agents. The surface morphologies of the preparedGaNnanostructures obtained by field emission scanning electron microscopy (FE-SEM) show a large number ofGaNnanowires and nanorods on theSisubstrates. The synthesized nanostructures are hexagonal as determined from XRD analysis and show a turn-on field of 5 v/μm at 10 μA/cm2.

Keywords: GaNnanostructures; field emission; chemical vapor deposition (CVD) (search for similar items in EconPapers)
Date: 2012
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DOI: 10.1142/S0218625X12500114

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