STRUCTURAL AND OPTICAL CHARACTERIZATION OFCdS:FeTHIN FILMS PREPARED BY FLASH EVAPORATION METHOD

H. R. Dizaji (), M. Ghasemian and M. H. Ehsani
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H. R. Dizaji: Thin Film Lab., Physics Department, Semnan University, Semnan 35195-363, I. R. Iran
M. Ghasemian: Physics Department, Islamic Azad University, Central Tehran Branch, Tehran, I. R. Iran
M. H. Ehsani: Thin Film Lab., Physics Department, Semnan University, Semnan 35195-363, I. R. Iran

Surface Review and Letters (SRL), 2012, vol. 19, issue 02, 1-6

Abstract: CdSthin layers of 250 nm thick doped with zero, 0.1, 0.2 and 0.3 weight percents iron were deposited on glass substrates by modified flash evaporation technique in vacuum at the pressure of 5 × 10−6mbar. The structure of the films was investigated by X-ray diffractometry. It was revealed that the films had hexagonal structure with (002) preferred orientation. Field emission scanning electron microscopy (FESEM) was employed to study the surface morphology of the prepared samples. It was found from FESEM images that theFe-dopedCdSfilm showed more surface uniformity. Optical absorption data of the films were used to measure the band gap of the films. It was found that the band gap of the samples decreased upon increasing the Iron concentration. Photoluminescence (PL) spectra of theCdS:Fethin films were used to study most prominent excitation peaks within the energy range (1.6–2.6 eV). The variation in peak energy was observed upon increasing theFecontent in the films.

Keywords: Thin film; semiconductor; flash evaporation (search for similar items in EconPapers)
Date: 2012
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DOI: 10.1142/S0218625X12500126

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