EXPERIMENTAL CHARACTERIZATION AND MODELING ANALYSIS ON NPNAlGaN/GaNHBT WITH HIGH IDEALITY FACTOR IN BOTH COLLECTOR AND BASE CURRENT

Shih-Wei Tan () and Shih-Wen Lai ()
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Shih-Wei Tan: Department of Electrical Engineering, National Taiwan Ocean University, 2 Peining Road, Keelung, 202, Taiwan, Republic of China
Shih-Wen Lai: Department of Electrical Engineering, National Taiwan Ocean University, 2 Peining Road, Keelung, 202, Taiwan, Republic of China

Surface Review and Letters (SRL), 2012, vol. 19, issue 04, 1-4

Abstract: Characterization and modeling analysis on both ideality factor of the collector current (ηC) and the base current (ηB) have higher than the excepted values of 1.0 and 2.0, respectively, for npn AlGaN/GaNheterojunction bipolar transistors (HBTs) have been reported. We employ the rapid thermal process annealing (RTP-annealing) to modify the base parasitical Schottky diode (called A-HBTs) after the as-depositedNi/Aubilayers on the base layer for electrode with no annealing (called N-HBTs) to compare with each other. For a HBT operated in Gummel-plot configuration, experimental and modeling results indicate that the base parasitical Schottky diode (BPSD) causes the base current (IB) and collector current (IC) with high ideality factor and raise the base-emitter voltage (VBE) to higher operation point, and therefore lead to more power consumption. Furthermore, the extended Ebers–Moll equivalent-circuit model together with the extracted device parameters provided simulated results that were in a good agreement with experimental ones.

Keywords: GaNHBT; RTP-annealing (search for similar items in EconPapers)
Date: 2012
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DOI: 10.1142/S0218625X12500436

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