FABRICATION AND OPTOELECTRONIC PROPERTIES OFMgxZn1-xOULTRATHIN FILMS BY LANGMUIR–BLODGETT TECHNOLOGY
Dongyan Tang (),
Qian Feng,
Enying Jiang and
Baozhu He
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Dongyan Tang: Department of Chemistry, School of Science, Harbin Institute of Technology, Harbin 150001, China
Qian Feng: Department of Chemistry, School of Science, Harbin Institute of Technology, Harbin 150001, China
Enying Jiang: Department of Chemistry, School of Science, Harbin Institute of Technology, Harbin 150001, China
Baozhu He: Department of Chemistry, School of Science, Harbin Institute of Technology, Harbin 150001, China
Surface Review and Letters (SRL), 2012, vol. 19, issue 04, 1-8
Abstract:
By transferringMgxZn1-xOsol and stearic acid onto a hydrophilic silicon wafer or glass plate, the Langmuir–Blodgett (LB) multilayers ofMgxZn1-xO(x:0, 0.2, 0.4) were deposited. After calcinations at 350°C for 0.5 h and at 500°C for 3 h,MgxZn1-xOultrathin films were fabricated. The optimized parameters for monolayer formation and multilayer deposition were determined by the surface pressure-surface (Π-A) area and the transfer coefficient, respectively. The expended areas of stearic acid withMgxZn1-xOsols under Π-Aisotherms inferred the interaction of stearic acid withMgxZn1-xOsols during the formation of monolayer at air–water interface. X-ray diffraction (XRD) was used to determine the crystal structures ofMgxZn1-xOnanoparticles and ultrathin films. The surface morphologies ofMgxZn1-xOultrathin films were observed by scanning probe microscopy (AFM). And the optoelectronic properties ofMgxZn1-xOwere detected and discussed based on photoluminescence (PL) spectra.
Keywords: LB technique; MgxZn1-xO; ultrathin films; optoelectronic properties (search for similar items in EconPapers)
Date: 2012
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DOI: 10.1142/S0218625X12500448
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