STRUCTURE AND OPTICAL PROPERTIES OFInNTHIN FILM GROWN ONSiCBY REACTIVE RF MAGNETRON SPUTTERING

M. Amirhoseiny (), Z. Hassan (), S. S. Ng () and G. Alahyarizadeh ()
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M. Amirhoseiny: Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia
Z. Hassan: Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia
S. S. Ng: Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia
G. Alahyarizadeh: Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia

Surface Review and Letters (SRL), 2013, vol. 20, issue 01, 1-5

Abstract: The structure and optical properties ofInNthin film grown on6H-SiCby reactive radio frequency magnetron sputtering were investigated. X-ray diffraction measurement shows that the depositedInNfilm has (101) preferred growth orientation and wurtzite structure. Atomic force microscopy results reveal smooth surface with root-mean-square roughness around 3.3 nm. One Raman-active optical phonon of E2(high) and two Raman- and infrared-active modes of A1(LO) and E1(TO) of the wurtziteInNare clearly observed at 488.7, 582.7 and 486 cm-1, respectively. These results leading to conclude that the wurtziteInNthin film with (101) preferred growth orientation was successfully grown on6H-SiCsubstrate.

Keywords: Indium nitride; silicon carbide; RF magnetron sputtering; X-ray diffraction (search for similar items in EconPapers)
Date: 2013
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DOI: 10.1142/S0218625X1350008X

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