STRUCTURAL, OPTICAL, AND ELECTRICAL CHARACTERIZATION OF SPRAY PYROLYSED INDIUM SULFIDE THIN FILMS

F. Rahman, J. Podder () and M. Ichimura
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F. Rahman: Department of Physics, Bangladesh University of Engineering and Technology, Dhaka-1000, Bangladesh
J. Podder: Department of Physics, Bangladesh University of Engineering and Technology, Dhaka-1000, Bangladesh
M. Ichimura: Department of Electrical and Electronic Engineering, Nagoya Institute of Technology, Nagoya 466-8555, Japan

Surface Review and Letters (SRL), 2013, vol. 20, issue 02, 1-7

Abstract: Indium sulfide (In2S3) thin films were deposited onto the glass substrates by a low cost simple spray pyrolysis technique at 300°C temperature. Aqueous solution of indium chloride and thiourea were used to deposit the binaryIn-Sfilm. The deposited thin films were annealed at 400° and 500°C temperatures and characterized structurally, optically and electrically using EDX, X-ray diffraction, UV-visible spectroscopy and four probe van der Pauw methods. The optical constants such as refractive index and extinction coefficient are calculated from absorbance and transmittance data from 300 to 1100 nm wavelength. The optical transmittance increased after annealing at 400° and 500°C. The band gap energy was reduced from 2.90 to 2.50 eV after annealing the as deposited films. The electrical conductivity as well as the activation energy was increased after annealing the samples.

Keywords: Indium sulfide; spray pyrolysis; EDX; X-ray diffraction; refractive index; band gap energy (search for similar items in EconPapers)
Date: 2013
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DOI: 10.1142/S0218625X13500145

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