GROWTH OF HIGHLY (0002) ORIENTEDInNFILMS ONAlInN/AlNBILAYER

C. J. Dong, M. Xu (), W. Lu and Q. Z. Huang
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C. J. Dong: Key Laboratory for Information Materials of Sichuan Province and College of Electrical and Information Engineering, Southwest University for Nationalities, Chengdu 610041, P. R. China;
M. Xu: Key Laboratory for Information Materials of Sichuan Province and College of Electrical and Information Engineering, Southwest University for Nationalities, Chengdu 610041, P. R. China;
W. Lu: Key Laboratory for Information Materials of Sichuan Province and College of Electrical and Information Engineering, Southwest University for Nationalities, Chengdu 610041, P. R. China
Q. Z. Huang: Key Laboratory for Information Materials of Sichuan Province and College of Electrical and Information Engineering, Southwest University for Nationalities, Chengdu 610041, P. R. China

Surface Review and Letters (SRL), 2013, vol. 20, issue 02, 1-8

Abstract: InNfilm with anAlInN/AlNbilayer buffer was deposited onSi(111)substrate by radio frequency (RF) magnetron sputtering. X-ray diffraction and Raman spectroscopy measurements reveal that theInNfilm is of hexagonal wurtzite crystal structure with highly (0002) preferred orientation. AnAl0.24In0.76Ninterface layer of about ~50 nm was confirmed by transmission electron microscopy (TEM) and further analyzed by X-ray photoelectron spectroscopy (XPS). The quality of this film is remarkably better thanInNfilms grown directly onSisubstrate or with only anAlNbuffer, due to the effective accommodation of mismatch between the film and substrate. Our results will be very useful in the fabrication of applicable nitride microelectronic materials.

Keywords: Thin films; nitrides; sputtering; microstructure (search for similar items in EconPapers)
Date: 2013
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DOI: 10.1142/S0218625X13500157

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