THERMALLY FORMEDRu–SiNANOSTRUCTURES GROWN ON SILICON (001) SURFACE

K. Shudo (), S. Ohno, N. Kawamura (), M. Toramaru, N. Kobayashi and Y. Miyamoto
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K. Shudo: Faculty of Engineering/Science, Yokohama National University, Tokiwadai 79-5, Hodogaya-ku Yokohama 240-8501, Japan
S. Ohno: Faculty of Engineering/Science, Yokohama National University, Tokiwadai 79-5, Hodogaya-ku Yokohama 240-8501, Japan
N. Kawamura: NHK Science and Technology Research Laboratories, Kinuta 1-10-11, Setagaya-ku Tokyo 157-8510, Japan
M. Toramaru: Graduate School of Engineering, Yokohama National University, Tokiwadai 79-5, Hodogaya-ku Yokohama 240-8501, Japan
N. Kobayashi: Graduate School of Engineering, Yokohama National University, Tokiwadai 79-5, Hodogaya-ku Yokohama 240-8501, Japan
Y. Miyamoto: NHK Science and Technology Research Laboratories, Kinuta 1-10-11, Setagaya-ku Tokyo 157-8510, Japan

Surface Review and Letters (SRL), 2013, vol. 20, issue 02, 1-7

Abstract: The thermal formation of silicide was observed onRu-depositedSi(001)surfaces at monolayer scale. RectangularRu–Siislands, composed of metastableRu-rich granular phase, were formed at the early stage of growth. The shape and size of the islands were strongly influenced by the orientation ofSi(001), and did not change until the density of the nearby steps became sufficiently high. In the late stage of growth, incorporation ofSiinto the islands starts, and at the same time the frequent attack ofSidetached from the terrace results in formation of step bunches on the terrace.

Keywords: Surfaces; crystal growth; nanostructures; STM; diffusion (search for similar items in EconPapers)
Date: 2013
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DOI: 10.1142/S0218625X13500182

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