INFLUENCE OF SUBSTRATE TEMPERATURE ON STRUCTURAL, ELECTRICAL AND OPTICAL PROPERTIES OF ITO THIN FILMS PREPARED BY RF MAGNETRON SPUTTERING

Bo He (), Lei Zhao, Jing Xu, Huaizhong Xing, Shaolin Xue and Meng Jiang
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Bo He: Department of Applied Physics and State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Donghua University, 2999 Renmin Rd. North, Songjiang District, Shanghai 201620, P. R. China
Lei Zhao: Department of Physics, Shanghai University, Shanghai 200444, P. R. China
Jing Xu: Instrumental Analysis and Research Center, Shanghai University, Shanghai 200444, P. R. China
Huaizhong Xing: Department of Applied Physics and State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Donghua University, 2999 Renmin Rd. North, Songjiang District, Shanghai 201620, P. R. China
Shaolin Xue: Department of Applied Physics and State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Donghua University, 2999 Renmin Rd. North, Songjiang District, Shanghai 201620, P. R. China
Meng Jiang: Department of Applied Physics and State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Donghua University, 2999 Renmin Rd. North, Songjiang District, Shanghai 201620, P. R. China

Surface Review and Letters (SRL), 2013, vol. 20, issue 05, 1-8

Abstract: In this paper, we investigated indium-tin-oxide (ITO) thin films on glass substrates deposited by RF magnetron sputtering using ceramic target to find the optimal condition for fabricating optoelectronic devices. The structural, electrical and optical properties of the ITO films prepared at various substrate temperatures were investigated. The results indicate the grain size increases with substrate temperature increases. As the substrate temperature grew up, the resistivity of ITO films greatly decreased. The ITO film possesses high quality in terms of electrode functions, when substrate temperature is 480°C. The resistivity is as low as9.42 × 10-5Ω•cm, while the carrier concentration and mobility are as high as 3.461 × 1021atom∕cm3and 19.1 cm2∕V⋅s, respectively. The average transmittance of the film is about 95% in the visible region. The novel ITO/np-Silicon frame, which prepared by RF magnetron sputtering at 480°C substrate temperature, can be used not only for low-cost solar cell, but also for high quantum efficiency of UV and visible lights enhanced photodetector for various applications.

Keywords: Indium-tin-oxide (ITO); RF magnetron sputtering; structure; electrical properties; optical properties (search for similar items in EconPapers)
Date: 2013
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DOI: 10.1142/S0218625X13500455

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