EFFECT OF SILICON DOPING IN CVD DIAMOND FILMS FROM MICROCRYSTALLINE TO NANOCRYSTALLINE ON WC-CoSUBSTRATES

Jianguo Zhang, Yuxiao Cui, Bin Shen and Fanghong Sun ()
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Jianguo Zhang: School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, P. R. China
Yuxiao Cui: School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, P. R. China
Bin Shen: School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, P. R. China
Fanghong Sun: School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, P. R. China

Surface Review and Letters (SRL), 2013, vol. 20, issue 06, 1-9

Abstract: Si-doped diamond films with variousSiconcentrations are deposited on WC-Cosubstrates using HFCVD method, with the mixture of acetone, tetraethoxysilane (TEOS) and hydrogen as the reactant source. A variety of characterizations, including FE-SEM, AFM, Raman, XRD, surface profilometer and Rockwell indentation, are conducted to systematically investigate the influence ofSiincorporation on diamond films. As theSi/Cratio from 0% to 5%, the grain size of as-deposited films decreases from 4 μm to about 50 nm, and the surface roughness reduces fromRa~ 290 nm toRa~ 180 nm. Besides, the intensity ratio ofI(111)/I(220)varies from 0.57 to 0, indicating the 〈110〉 preferred orientation of the nanocrystalline structure in the 5% doped diamond films. The silicon doping is beneficial for the formation of non-diamond carbide phases in the films, according to the Raman spectra. Moreover, the film adhesion is also improved with the increase ofSi/Cratio.

Keywords: CVD diamond films; silicon doping; WC-Cosubstrates; characterizations; adhesive strength (search for similar items in EconPapers)
Date: 2013
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DOI: 10.1142/S0218625X13500558

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