PROCESSING–STRUCTURE–PROPERTY CORRELATION IN DC SPUTTERED MOLYBDENUM THIN FILMS

Majid Khan (), Mohammad Islam (), Aftab Akram () and Umair Manzoor ()
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Majid Khan: National Synchrotron Radiation Laboratory (NSRL) and College of Nuclear Science and Technology, CAS Key Laboratory of Soft Matter Chemistry, University of Science and Technology of China (USTC), Hefei 230029, China
Mohammad Islam: College of Engineering, King Saud University, P. O. Box 800, Riyadh 11421, Saudi Arabia;
Aftab Akram: School of Chemical and Materials Engineering, National University of Sciences and Technology, Islamabad 44000, Pakistan
Umair Manzoor: Department of Physics, COMSATS Institute of Information Technology, Islamabad, Pakistan

Surface Review and Letters (SRL), 2013, vol. 20, issue 06, 1-6

Abstract: Molybdenum thin films were sputter deposited under different conditions of DC power and chamber pressure. The structure and topography of the films were investigated using AFM, SEM and XRD techniques. Van der Pauw method and tape test were employed to determine electrical resistivity and interfacial strength to the substrate, respectively. All the films are of sub-micron thickness with maximum growth rate of 78 nm/min and crystallite size in the range of 4 to 21 nm. The films produced at high power and low pressure exhibit compressive residual strains, low electrical resistivity and poor adhesion to the glass substrate, whereas the converse is true for films produced at high pressure.

Keywords: Molybdenum; sputtering; PVD; resistivity; strain; films (search for similar items in EconPapers)
Date: 2013
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DOI: 10.1142/S0218625X13500650

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