STRUCTURE EVOLUTION AND ELECTRIC PROPERTIES OFTaNFILMS DEPOSITED ONAl2O3-BASED CERAMIC AND GLASS SUBSTRATES BY MAGNETRON REACTIVE SPUTTERING

Yan Ming Zhou (), Yang Zhao Ma, Zhong Xie and Ming Zhi He
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Yan Ming Zhou: School of Physics & Microelectronics Science, Hunan University, Hunan 410082, P. R. China
Yang Zhao Ma: School of Physics & Microelectronics Science, Hunan University, Hunan 410082, P. R. China
Zhong Xie: School of Physics & Microelectronics Science, Hunan University, Hunan 410082, P. R. China
Ming Zhi He: School of Physics & Microelectronics Science, Hunan University, Hunan 410082, P. R. China

Surface Review and Letters (SRL), 2014, vol. 21, issue 02, 1-12

Abstract: Structure evolution and electric properties of tantalum nitride(TaN)films deposited onAl2O3-based ceramic and glass substrates by magnetron reactive sputtering were carried out as a function of theN2-to-Arflow ratio. TheTaNthin films onAl2O3-based ceramic substrates grow with micronclusters composed of numerous nanocrystallites, contains from single-phase ofTa2Ngrains toTaN, and exhibits high defect density, sheet resistance and negative TCR as theN2-to-Arflow ratio continuously increases. However, the films on the glass substrates grow in the way of sandwich close-stack, contains from single-phase ofTa2Ngrains toTaNandTa3N5phases with the increase ofN2-to-Arflow ratio. These results indicate that theN2-to-Arflow ratio and surface characteristic difference of substrates play a dominant effect on the structure and composition of theTaNfilms, resulting in different electrical properties for the films onAl2O3-based ceramic and the samples on glass substrates.

Keywords: Al2O3-based ceramic substrate; glass substrate; tantalum nitride thin films; N2partial pressure; temperature coefficient of resistance; sputtering (search for similar items in EconPapers)
Date: 2014
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DOI: 10.1142/S0218625X14500280

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