INVESTIGATION OF LEAKAGE CURRENT BEHAVIOR OFPt/Bi0.975La0.025Fe0.975Ni0.025O3/PtCAPACITOR MEASURED AT DIFFERENT TEMPERATURES

Xiu Hong Dai, Hong Dong Zhao (), Lei Zhang, Hui Juan Zhu, Xiao Hong Li, Ya Jun Zhao, Jian Xin Guo, Qing Xun Zhao, Ying Long Wang, Bao Ting Liu () and Lian Xi Ma
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Xiu Hong Dai: College of Information Engineering, Hebei University of Technology, Tianjin 300401, P. R. China
Hong Dong Zhao: College of Information Engineering, Hebei University of Technology, Tianjin 300401, P. R. China
Lei Zhang: College of Physics Science & Technology, Hebei University, Baoding 071002, P. R. China
Hui Juan Zhu: College of Physics Science & Technology, Hebei University, Baoding 071002, P. R. China
Xiao Hong Li: College of Physics Science & Technology, Hebei University, Baoding 071002, P. R. China
Ya Jun Zhao: College of Physics Science & Technology, Hebei University, Baoding 071002, P. R. China
Jian Xin Guo: College of Physics Science & Technology, Hebei University, Baoding 071002, P. R. China
Qing Xun Zhao: College of Physics Science & Technology, Hebei University, Baoding 071002, P. R. China
Ying Long Wang: College of Physics Science & Technology, Hebei University, Baoding 071002, P. R. China
Bao Ting Liu: College of Physics Science & Technology, Hebei University, Baoding 071002, P. R. China
Lian Xi Ma: Department of Physics, Blinn College, TX 77805, Bryan, USA

Surface Review and Letters (SRL), 2014, vol. 21, issue 02, 1-7

Abstract: PolycrystallineBi0.975La0.025Fe0.975Ni0.025O3(BLFNO) film is fabricated onPt/Ti/SiO2/Si(111)substrate by sol–gel method. It is found that the well-crystallized BLFNO film is polycrystalline, and thePt/BLFNO/Ptcapacitor possesses good ferroelectric properties with remnant polarization of 74 μC/cm2at electric field of 833 kV/cm. Moreover, it is also found that the leakage current density of thePt/BLFNO/Ptcapacitor increases with the increase of measurement temperature ranging from 100 to 300 K. The leakage density of thePt/BLFNO/Ptcapacitor satisfies space-charge-limited conduction (SCLC) at higher electric field and shows little dependence on voltage polarity and temperature, but shows polarity and temperature dependence at lower applied electric field. With temperature increasing from 100 to 300 K at lower applied electric field, the most likely conduction mechanism is from Ohmic behavior to SCLC for positive biases, but no clear dominant mechanism for negative biases is shown.

Keywords: BiFeO3; doping; temperature; leakage current (search for similar items in EconPapers)
Date: 2014
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DOI: 10.1142/S0218625X14500292

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