THERMOELECTRIC AND MAGNETO-THERMOELECTRIC PROPERTIES OFGa-DOPEDZnOTHIN FILMS BY RF MAGNETRON SPUTTERING

H. Liu, L. Fang (), F. Wu, D. X. Tian, W. J. Li, Y. Lu, C. Y. Kong () and S. F. Zhang ()
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H. Liu: Department of Applied Physics, Chongqing University, Chongqing 401331, P. R. China
L. Fang: Department of Applied Physics, Chongqing University, Chongqing 401331, P. R. China
F. Wu: Department of Applied Physics, Chongqing University, Chongqing 401331, P. R. China
D. X. Tian: Department of Applied Physics, Chongqing University, Chongqing 401331, P. R. China;
W. J. Li: Department of Applied Physics, Chongqing University, Chongqing 401331, P. R. China
Y. Lu: Department of Applied Physics, Chongqing University, Chongqing 401331, P. R. China
C. Y. Kong: Department of Applied Physics, Chongqing Normal University, Chongqing 400030, P. R. China
S. F. Zhang: College of Software, Chongqing College of Electronic Engineering, Chongqing 401331, P. R. China

Surface Review and Letters (SRL), 2014, vol. 21, issue 03, 1-8

Abstract: Zn(1-x)GaxOthin films (x = 0.01, 0.03, 0.05, 0.07 named as GZO1, GZO2, GZO3, GZO4, respectively) were deposited on glass substrates by RF magnetron sputtering. The crystal structure, electrical, thermoelectric and magneto-thermoelectric properties of GZO films were investigated. It is found that all the GZO films are polycrystalline and preferentially oriented in thec-axis. The electrical resistivity of GZO films decreased first with increasingGadoping content before it reached a minimum atx = 0.05, and then increased with further increasingGadoping content. The magnetic fields (B) ranging from 0 to 1.5 T are perpendicularly applied to the films to study the magneto-thermoelectric properties. It is observed that the absolute values of Seebeck coefficients (|S|) of GZO1, GZO2, GZO3 show marked variation with magnetic field and obtain the maximum value atB = 0.5T. Whereas the|S|value of GZO4 fluctuates slightly with magnetic field and reaches its peak atB = 1.0T. The magneto-thermoelectric properties are analyzed and we propose that this behavior is mainly attributed to the effect of magnetic field on the electron transport.

Keywords: Electric properties; Seebeck coefficients; magneto-thermoelectric properties; ZnO:Gathin films; RF magnetron sputtering (search for similar items in EconPapers)
Date: 2014
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DOI: 10.1142/S0218625X14500334

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