INFLUENCE OF POST ANNEALING ON SOL–GEL DEPOSITEDZnOTHIN FILMS

Hemalata Bhadane, Edmund Samuel () and Dinesh Kumar Gautam
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Hemalata Bhadane: Department of Electronics, North Maharashtra University, Jalgaon 425001, India
Edmund Samuel: Research Center for Advanced Photon Technology, Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
Dinesh Kumar Gautam: Department of Electronics, North Maharashtra University, Jalgaon 425001, India

Surface Review and Letters (SRL), 2014, vol. 21, issue 04, 1-7

Abstract: The effect of annealing temperature on sol–gel depositedZnOthin films have been studied. The average crystallite size determined from XRD shows that the deposited films are nanocrystalline. FTIR confirms deposition ofZnOthin films. The transmittance of annealedZnOthin films is greater than 80% in visible region with bandgap ranging from 3.25–3.19 eV. The films annealed at 450°C temperature shows lower resistivity value of 527.241 Ωm. The deposited nanocrystalline films are suitable for biosensing applications due to its higher surface area.

Keywords: ZnO; sol–gel; bandgap (search for similar items in EconPapers)
Date: 2014
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DOI: 10.1142/S0218625X14500462

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