OPTICAL PROPERTIES OFN-DOPEDCu2OTHIN FILMS DEPOSITED BY RF-MAGNETRON SPUTTERINGCu2OTARGET

Guozhong Lai (), Yangwei Wu, Limei Lin, Yan Qu and Fachun Lai
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Guozhong Lai: School of Physics and Electromechanical Engineering, Longyan University, Longyan 364012, P. R. China
Yangwei Wu: School of Physics and Energy, Fujian Normal University, Fuzhou 350108, P. R. China
Limei Lin: School of Physics and Energy, Fujian Normal University, Fuzhou 350108, P. R. China
Yan Qu: School of Physics and Energy, Fujian Normal University, Fuzhou 350108, P. R. China
Fachun Lai: School of Physics and Energy, Fujian Normal University, Fuzhou 350108, P. R. China

Surface Review and Letters (SRL), 2014, vol. 21, issue 04, 1-5

Abstract: N-dopedCu2Ofilms were deposited on quartz substrates by reactive magnetron sputtering aCu2Otarget. The optical constants and thicknesses of the films with different nitrogen partial pressure (NPP) were retrieved from transmittance data by an optical model which combines the Forouhi–Bloomer model with modified Drude model. The results show that when NPP increases from 0.0 to 0.033 Pa, the optical gap decreases from 2.14 to 1.95 eV. Additionally, an optical absorption process in the infrared region below the optical band gap was observed forN-dopedCu2Ofilms, which was not found in the pureCu2Ofilm. This is because an intermediate band (IB) in the band gap results from nitrogen doping. It is believed thatN-dopedCu2Ofilm with suitable NPP could be used to enhance the energy conversion efficiency for photovoltaic cells.

Keywords: Cu2O; N-doped; optical properties; magnetron sputtering (search for similar items in EconPapers)
Date: 2014
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DOI: 10.1142/S0218625X14500528

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