GROWTH, STRUCTURAL CHARACTERIZATION AND INTERFACIAL REACTION OF MAGNETRON SPUTTEREDCeO2THIN FILMS ON DIFFERENT SUBSTRATES

Parthasarathi Bera () and Chinnasamy Anandan
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Parthasarathi Bera: Surface Engineering Division, CSIR-National Aerospace Laboratories, Bangalore 560017, India
Chinnasamy Anandan: Surface Engineering Division, CSIR-National Aerospace Laboratories, Bangalore 560017, India

Surface Review and Letters (SRL), 2014, vol. 21, issue 04, 1-13

Abstract: CeO2thin films were deposited onSi,Al,Ti–6Al–4Valloy,Si3N4and glass substrates by magnetron sputtering at room temperature. Growth ofCeO2films onSiandSi3N4and effect of annealing were investigated by XRD, FESEM and AFM. Interaction between depositedCeO2films andSi,Al,Ti–6Al–4Valloy,Si3N4and glass substrates was investigated by XPS. XRD studies show that films are oriented preferentially to (200)-direction ofCeO2and no significant change is observed in the XRD patterns of films after heat treatment.CeO2film onSi3N4exhibits rough morphology, whereas very fine morphology is observed inCeO2film onSi.CeO2film onSishows lower roughness in relation to that onSi3N4as demonstrated by AFM studies. XPS results show thatCeis present as both +4 and +3 oxidation states inCeO2film deposited onSiandAlsubstrates, whereasCe4+is the main species inCeO2films deposited onTi–6Al–4Valloy,Si3N4and glass substrates.Ce3d,Si2pandO1score level spectra demonstrate thatCe2O3or cerium silicate andSiOxtype of species are formed at the interface ofCeO2andSi. Similarly, formation of interfacial species likeCe2O3or cerium aluminate is evident inCeO2film onAlas demonstrated by XPS studies. On the other hand, interfacial reactions betweenCeO2andTi–6Al–4Valloy,Si3N4and glass substrates are limited in the respective films.

Keywords: CeO2; Thin film; Si; Al; Ti–6Al–4Valloy; Si3N4and glass; interfacial reaction; XPS (search for similar items in EconPapers)
Date: 2014
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DOI: 10.1142/S0218625X14500541

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