EFFECTS OFTiOxINTERLAYER ON RESISTANCE SWITCHING OFPt/TiOx/ZnO/n+-SiSTRUCTURES
Hongxia Li,
Xiaojun Lv,
Junhua Xi,
Xin Wu,
Qinan Mao,
Qingmin Liu and
Zhenguo Ji ()
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Hongxia Li: Lab of Electronic Materials and Devices, Hangzhou Dianzi University, Hangzhou 310018, P. R. China
Xiaojun Lv: Lab of Electronic Materials and Devices, Hangzhou Dianzi University, Hangzhou 310018, P. R. China
Junhua Xi: Lab of Electronic Materials and Devices, Hangzhou Dianzi University, Hangzhou 310018, P. R. China;
Xin Wu: School of Mechanical Engineering, Hangzhou Dianzi University, Hangzhou 310018, P. R. China
Qinan Mao: Lab of Electronic Materials and Devices, Hangzhou Dianzi University, Hangzhou 310018, P. R. China
Qingmin Liu: School of Mechanical Engineering, Hangzhou Dianzi University, Hangzhou 310018, P. R. China
Zhenguo Ji: Lab of Electronic Materials and Devices, Hangzhou Dianzi University, Hangzhou 310018, P. R. China;
Surface Review and Letters (SRL), 2014, vol. 21, issue 05, 1-6
Abstract:
In this paper, we fabricatedPt/TiOx/ZnO/n+-Sistructures by insertingTiOxinterlayer betweenPttop electrode (TE) andZnOthin film for non-volatile resistive random access memory (ReRAM) applications. Effects ofTiOxinterlayer with different thickness on the resistance switching ofPt/TiOx/ZnO/n+-Sistructures were investigated. Conduction behaviors in high and low resistance state (HRS and LRS) fit well with the trap-controlled space-charge-limited conduction (SCLC) and Ohmic behavior, respectively. Variations of set and reset voltages and HRS and LRS resistances ofPt/TiOx/ZnO/n+-Sistructures were investigated as a function ofTiOxthickness. Switching cycling tests were attempted to evaluate the endurance reliability ofPt/TiOx/ZnO/n+-Sistructures. Additionally, the switching mechanism was analyzed by the filament model.
Keywords: Thin films; resistive switching; interlayer (search for similar items in EconPapers)
Date: 2014
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DOI: 10.1142/S0218625X14500619
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