EFFECTS OF PRECURSOR SOLUTION MODIFICATION ON THE CRYSTALLINITY AND ELECTRICAL PROPERTIES OFNa0.5Bi0.5TiO3-BiFeO3BASED THIN FILM

Huiting Sui, Changhong Yang (), Gaoyun Wang and Chao Feng
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Huiting Sui: School of Materials Science and Engineering, University of Jinan, Jinan 250022, P. R. China
Changhong Yang: School of Materials Science and Engineering, University of Jinan, Jinan 250022, P. R. China;
Gaoyun Wang: Shandong Pulilong Pressure Vessels Co., Ltd., 250119, P. R. China
Chao Feng: School of Materials Science and Engineering, University of Jinan, Jinan 250022, P. R. China

Surface Review and Letters (SRL), 2014, vol. 21, issue 05, 1-5

Abstract: For chemical solution decomposition process, the precursor solution is a basic factor affecting the quality of the deposited-film. In this paper, we choose (l00)-oriented0.7[(Bi0.95Ce0.05)0.5Na0.5(Ti0.99Fe0.01)O3]-0.3BiFe0.97Mn0.03O3(0.7NBTCeFe-0.3BFOMn)thin films prepared by various precursor solutions for investigation. The roles of precursor solution modification on crystallinity, ferroelectric and dielectric properties are characterized. With the addition of polyethylene glycol into the solution, phase-pure perovskite structure can be obtained. Furthermore, when the volume ratio for the solvents (ethylene glycol to acetic acid) is modified as 2:1, enhanced ferroelectricity can be achieved with a remanent polarization (Pr) of 27.5 μC/cm2, which coincides well with the capacitance–voltage curve with relatively sharp feature. Also, the0.7NBTCeFe-0.3BFOMnfilm exhibits a dielectric constant (εr)of 576 and dielectric loss (tan δ) of 0.123 at 100 kHz.

Keywords: Ferroelectric thin film; precursor solution; microstructure (search for similar items in EconPapers)
Date: 2014
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DOI: 10.1142/S0218625X14500644

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