INVESTIGATION OFTa/Ni–AlINTEGRATED FILM USED AS A DIFFUSION BARRIER LAYER BETWEENCuANDSi

Lim Yang, Shi Jie Wang, Ji Chuan Huo, Xiao Hong Li, Jian Xin Guo, Xiu Hong Dai, Lian Xi Ma, Xiang Yi Zhang and Bao Ting Liu ()
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Lim Yang: Hebei Provincial Key Lab of Optoelectronic Information Materials, and College of Physics Science & Technology, Hebei University, Hebei 071002, P. R. China
Shi Jie Wang: Hebei Provincial Key Lab of Optoelectronic Information Materials, and College of Physics Science & Technology, Hebei University, Hebei 071002, P. R. China
Ji Chuan Huo: Hebei Provincial Key Lab of Optoelectronic Information Materials, and College of Physics Science & Technology, Hebei University, Hebei 071002, P. R. China
Xiao Hong Li: Hebei Provincial Key Lab of Optoelectronic Information Materials, and College of Physics Science & Technology, Hebei University, Hebei 071002, P. R. China
Jian Xin Guo: Hebei Provincial Key Lab of Optoelectronic Information Materials, and College of Physics Science & Technology, Hebei University, Hebei 071002, P. R. China
Xiu Hong Dai: Hebei Provincial Key Lab of Optoelectronic Information Materials, and College of Physics Science & Technology, Hebei University, Hebei 071002, P. R. China
Lian Xi Ma: Department of Physics, Blinn College, Bryan, TX 77805, USA
Xiang Yi Zhang: State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Hebei 066004, P. R. China
Bao Ting Liu: Hebei Provincial Key Lab of Optoelectronic Information Materials, and College of Physics Science & Technology, Hebei University, Hebei 071002, P. R. China

Surface Review and Letters (SRL), 2014, vol. 21, issue 06, 1-5

Abstract: Ta (3.3 nm)/Ni–Al(3.3 nm) integrated films deposited onSisubstrates by magnetron sputtering, annealed at various temperatures in a ultra-high vacuum, have been studied as diffusion barrier layers betweenCuandSifor application inCuinterconnection. The images of transmission electron microscopy (TEM) prove that the cross-sectional interfaces ofCu/Ta/Ni–Al/Sisample annealed at 600°C are clear and sharp. NoCu–silicide peaks can be found from the X-ray diffraction (XRD) patterns of the 850°C annealed sample, but the sheet resistance of the sample increases abruptly. Moreover, large grooves are found from the image of atomic force microscopy (AFM) for the 850°C annealed sample, implying the failure of the diffusion barrier. The integratedTa/Ni–Albarrier layer retains thermally stable nature up to at least 800°C, indicating that theTa/Ni–Alintegrated film is an excellent diffusion barrier betweenCuandSi.

Keywords: Diffusion barrier; Cuinterconnect; amorphousNi–Al; Ta; thin film; sputtering (search for similar items in EconPapers)
Date: 2014
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DOI: 10.1142/S0218625X14500796

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