HIGH-kGATE DIELECTRIC: AMORPHOUSTa/La2O3FILMS GROWN ONSiAT LOW PRESSURE

Ali Bahari () and Zahra Khorshidi ()
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Ali Bahari: Department of Solid State Physics, University of Mazandaran, Babolsar, 4741695447, Iran
Zahra Khorshidi: Department of Solid State Physics, University of Mazandaran, Babolsar, 4741695447, Iran

Surface Review and Letters (SRL), 2014, vol. 21, issue 06, 1-7

Abstract: In the present study,Ta/La2O3films (La2O3doped withTa2O5) as a gate dielectric were prepared using a sol–gel method at low pressure.Ta/La2O3film has some hopeful properties as a gate dielectric of logic device. The structure and morphology ofTa/La2O3films were studied using X-ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM). Electrical properties of films were performed using capacitance–voltage (C–V) and current density-voltage (J–V) measurements. The optical bandgap of samples was studied by UV-visible optical absorbance measurement. The optical bandgap,Eopt, is determined from the absorbance spectra. The obtained results show thatTa/La2O3film as a good gate dielectric has amorphous structure, good thermal stability, high dielectric constant (≈ 25), low leakage current and wide bandgap (≈ 4.7 eV).

Keywords: Ta/La2O3film; amorphous materials; nanostructures; gate dielectric (search for similar items in EconPapers)
Date: 2014
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DOI: 10.1142/S0218625X14500802

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