THE INFLUENCE OF SYNTHESIZING TEMPERATURES ON THE PROPERTIES OF THECu/Sn/ZnSPRECURSOR THIN FILMS

Ya Ming Sun, Dong Long, Xiang Cheng Meng, Zhong Hua, Bo Li and Bin Yao ()
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Ya Ming Sun: State Key Lab of Superhard Material and College of Physics, Jilin University, Changchun 130023, P. R. China
Dong Long: Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Jilin Normal University, Siping 136000, P. R. China
Xiang Cheng Meng: Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Jilin Normal University, Siping 136000, P. R. China
Zhong Hua: Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Jilin Normal University, Siping 136000, P. R. China
Bo Li: Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Dong Nanhu Road 3888, Changchun 130012, P. R. China
Bin Yao: State Key Lab of Superhard Material and College of Physics, Jilin University, Changchun 130023, P. R. China;

Surface Review and Letters (SRL), 2015, vol. 22, issue 01, 1-5

Abstract: Cu2ZnSnS4thin films were prepared on soda-lime glass by sulfurization of theCu/Sn/ZnSprecursors. The microstructure, morphology and optical properties of the films were investigated by X-ray diffraction (XRD), Raman scattering (Raman), scanning electron microscopy (SEM) and UV-visible spectrophotometer (UV-Vis). The SEM images of the precursor and the thin films annealed at different temperatures are very different due to their different surface products. The absorption spectrum shifts to high-wave band region with increasing annealing temperatures. The precursor thin film annealed at 500°C for 2 h forms a single CZTS phase with kesterite structure and the bandgap is estimated to be 1.54 eV.

Keywords: Cu2ZnSnS4; thin film; absorption spectrum (search for similar items in EconPapers)
Date: 2015
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DOI: 10.1142/S0218625X15500092

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