IMPROVEMENT OF RETENTIVITY INTiOx/HfOxBILAYER STRUCTURE FOR LOW POWER RESISTIVE SWITCHING MEMORY APPLICATIONS

Pranab Kumar Sarkar and Asim Roy ()
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Pranab Kumar Sarkar: Department of Physics, National Institute of Technology Silchar, Silchar-788010, Assam, India
Asim Roy: Department of Physics, National Institute of Technology Silchar, Silchar-788010, Assam, India

Surface Review and Letters (SRL), 2015, vol. 22, issue 02, 1-6

Abstract: This paper reports the bipolar resistive switching (BRS) characteristics inAl/Ti/TiOx/HfOx/Ptheterostructure during a DC sweep cycle with current compliance (CC) of 250 μA. The improvement in the switching performance in a CMOS compatibleAl/Ti/TiOx/HfOx/Ptmemory cell has been observed. The improvement is due to oxygen-richHfOxlayer insertion in simple metal-insulator-metal (MIM) sandwich structure. Analysis of current–voltage (I–V) characteristics revealed the trap-controlled space charge limited current (TC-SCLC) conduction mechanism is the most suitable mechanism signifying the dominant current conduction in all the bias regions and resistance states. Furthermore, this bilayer memory stack exhibits a tight distribution of switching parameters, good switching endurance up to 105cycles, and good data retention of > 104s at 85°C.

Keywords: Resistive memory; hafnium oxide; thin film and rf sputtering (search for similar items in EconPapers)
Date: 2015
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DOI: 10.1142/S0218625X15500316

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