PENTACENE-BASED ORGANIC THIN FILM TRANSISTOR WITHSiO2GATE DIELECTRIC

Ahmet Demir (), Sadik Bağci, Sait Eren San and Zekeriya Doğruyol
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Ahmet Demir: Department of Physics, Sakarya University, Sakarya 54187, Turkey;
Sadik Bağci: Department of Physics, Sakarya University, Sakarya 54187, Turkey
Sait Eren San: Department of Physics, Gebze Technology University, Kocaeli 41400, Turkey
Zekeriya Doğruyol: Department of Engineering Science, Istanbul University, Avcılar, 34850 Istanbul, Turkey

Surface Review and Letters (SRL), 2015, vol. 22, issue 03, 1-6

Abstract: An organic thin film transistor (OTFT) based on pentacene was fabricated withSiO2as the gate dielectric material. We have investigated the effects of the thickness of pentacene layer and the organic semiconductor (OSC) material on OTFT devices at two different thicknesses.Aumetal was deposited for gate, source and drain contacts of the device by using thermal evaporation method. Pentacene thin film layer was also prepared with thermal evaporation. Our study has shown that the change in pentacene thickness makes a noteworthy difference on the field effect mobility (μFET), values, threshold voltages (VT) and on/off current ratios (Ion/Ioff). OTFTs exhibited saturation at the order of μFETof 3.92 cm2/Vs and 0.86 cm2/Vs at different thicknesses. Ion/Ioffand VTare also thickness dependent. Ion/Ioffis 1 × 103, 2 × 102and VTis 15 V, 27 V of 40 nm and 60 nm, respectively. The optimized thickness of the pentacene layer was found as 40 nm. The effect of the OSC layer thickness on the OTFT performance was found to be conspicuous.

Keywords: OTFT; pentacene; SiO2; thickness; mobility (search for similar items in EconPapers)
Date: 2015
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DOI: 10.1142/S0218625X15500389

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