PENTACENE-BASED ORGANIC THIN FILM TRANSISTOR WITHSiO2GATE DIELECTRIC
Ahmet Demir (),
Sadik Bağci,
Sait Eren San and
Zekeriya Doğruyol
Additional contact information
Ahmet Demir: Department of Physics, Sakarya University, Sakarya 54187, Turkey;
Sadik Bağci: Department of Physics, Sakarya University, Sakarya 54187, Turkey
Sait Eren San: Department of Physics, Gebze Technology University, Kocaeli 41400, Turkey
Zekeriya Doğruyol: Department of Engineering Science, Istanbul University, Avcılar, 34850 Istanbul, Turkey
Surface Review and Letters (SRL), 2015, vol. 22, issue 03, 1-6
Abstract:
An organic thin film transistor (OTFT) based on pentacene was fabricated withSiO2as the gate dielectric material. We have investigated the effects of the thickness of pentacene layer and the organic semiconductor (OSC) material on OTFT devices at two different thicknesses.Aumetal was deposited for gate, source and drain contacts of the device by using thermal evaporation method. Pentacene thin film layer was also prepared with thermal evaporation. Our study has shown that the change in pentacene thickness makes a noteworthy difference on the field effect mobility (μFET), values, threshold voltages (VT) and on/off current ratios (Ion/Ioff). OTFTs exhibited saturation at the order of μFETof 3.92 cm2/Vs and 0.86 cm2/Vs at different thicknesses. Ion/Ioffand VTare also thickness dependent. Ion/Ioffis 1 × 103, 2 × 102and VTis 15 V, 27 V of 40 nm and 60 nm, respectively. The optimized thickness of the pentacene layer was found as 40 nm. The effect of the OSC layer thickness on the OTFT performance was found to be conspicuous.
Keywords: OTFT; pentacene; SiO2; thickness; mobility (search for similar items in EconPapers)
Date: 2015
References: View complete reference list from CitEc
Citations:
Downloads: (external link)
http://www.worldscientific.com/doi/abs/10.1142/S0218625X15500389
Access to full text is restricted to subscribers
Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.
Export reference: BibTeX
RIS (EndNote, ProCite, RefMan)
HTML/Text
Persistent link: https://EconPapers.repec.org/RePEc:wsi:srlxxx:v:22:y:2015:i:03:n:s0218625x15500389
Ordering information: This journal article can be ordered from
DOI: 10.1142/S0218625X15500389
Access Statistics for this article
Surface Review and Letters (SRL) is currently edited by S Y Tong
More articles in Surface Review and Letters (SRL) from World Scientific Publishing Co. Pte. Ltd.
Bibliographic data for series maintained by Tai Tone Lim ().