ELECTRIC PROPERTIES OFMn-DOPEDBiFeO3THIN FILM DEPOSITED ON ITO SUBSTRATE

J. M. Luo ()
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J. M. Luo: School of Physics and Optical Information Sciences, Jiaying University, Meizhou 514015, Guangdong, P. R. China

Surface Review and Letters (SRL), 2015, vol. 22, issue 04, 1-4

Abstract: NanoscaleMn-dopedBiFeO3thin film with a perovskite crystal structure has been fabricated on ITO substrate using chemical solution deposition, which shows a large dielectric constant and a low leakage current. The ferroelectric test result demonstrates that large values of remanent polarization and coercive field can be attained in this structure. Additionally, stable resistive switching characteristics with an analysis of current conduction mechanisms have also been investigated, which can be attributed to the redistribution of oxygen vacancies under an electric field. This study suggests thatMn-doped BFO thin film grown on ITO substrate may provide a potential application for multifunctional memories.

Keywords: Electric properties; ferroelectric; resistive switching; bismuth ferrite; chemical solution deposition; 73.40.Rw; 77.22.Jp; 77.55.Nv (search for similar items in EconPapers)
Date: 2015
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DOI: 10.1142/S0218625X15500481

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