INFLUENCE OF ANNEALING TREATMENT ON THE PHYSICAL PROPERTIES OFInAlNFILMS

Naveed Afzal (), Mutharasu Devarajan, M. A. Ahmad and Kamarulazizi Ibrahim
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Naveed Afzal: Nano Optoelectronics Research Laboratory, School of Physics, Universiti Sains Malaysia (USM) 11800, Pulau Pinang, Malaysia
Mutharasu Devarajan: Nano Optoelectronics Research Laboratory, School of Physics, Universiti Sains Malaysia (USM) 11800, Pulau Pinang, Malaysia
M. A. Ahmad: Nano Optoelectronics Research Laboratory, School of Physics, Universiti Sains Malaysia (USM) 11800, Pulau Pinang, Malaysia
Kamarulazizi Ibrahim: Nano Optoelectronics Research Laboratory, School of Physics, Universiti Sains Malaysia (USM) 11800, Pulau Pinang, Malaysia

Surface Review and Letters (SRL), 2015, vol. 22, issue 05, 1-9

Abstract: In this work, pure indium and aluminum targets were co-sputtered in a reactive argon–nitrogen environment at 200°C to depositInAlNfilm on theGaAssubstrate in the presence of aZnObuffer layer. The as-grown film was annealed at 750°C for 1 h in a high temperature furnace under nitrogen ambient. XRD pattern of the as-grown film did not display any diffraction peak relating to theInAlNdue to its poor structural crystallinity, however, the annealed film exhibitedInAlNdiffraction peaks corresponding to (002), (101) and (102) planes. A significant increase in the grain size and the surface roughness was observed after the films' annealing. Raman spectroscopy revealedA1(LO) andE2(high) phonon modes whereas the PL analysis showed a luminescence peak at 2 eV in the annealed film. The Hall measurements indicated an increase in the carrier concentration and electron mobility after the annealing which was accompanied by a decrease in electrical resistivity of the film. The dark current–voltage(I–V)characteristics of the as-grown and the annealed films were also recorded to investigate the barrier height and the ideality factor.

Keywords: Magnetron sputtering; thin film; InAlNalloys; annealing; physical properties (search for similar items in EconPapers)
Date: 2015
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DOI: 10.1142/S0218625X15500626

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