FIELD EVAPORATION OF GROUNDED ARSENIC DOPED SILICON CLUSTERS

Zexiang Deng, Juncong She, Zhibing Li, Weiliang Wang () and Qiang Chen
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Zexiang Deng: State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275, P. R. China
Juncong She: State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275, P. R. China
Zhibing Li: State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275, P. R. China
Weiliang Wang: State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275, P. R. China
Qiang Chen: Department of Dentistry, The Third Affiliated Hospital, Sun Yat-sen University, Guangzhou 510630, P. R. China

Surface Review and Letters (SRL), 2015, vol. 22, issue 06, 1-5

Abstract: We have investigated the field evaporation of grounded arsenic (As) doped silicon (Si) clusters composed of 52 atoms with density functional theory (DFT) to mimic Si nano structures of hundreds of nanometers long standing on a substrate. Six cluster structures with different As doping concentrations and dopant locations are studied. The critical evaporation electric fields are found to be lower for clusters with higher doping concentrations and doping sites closer to the surface. We attribute the difference to the difference in binding energies corresponding to the different As-doping concentrations and to the doping locations. Our theoretical study could shed light on the stability of nano apexes under high electric field.

Keywords: Field evaporation; silicon; first principle calculation (search for similar items in EconPapers)
Date: 2015
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DOI: 10.1142/S0218625X15500699

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