CHARACTERIZING LOCALIZED STRAIN OF IN0.83Al0.17As/In0.83Ga0.17As DETECTOR USING LOW FREQUENCY ATOMIC FORCE ACOUSTIC MICROSCOPE

Weitao Su, Honglei Dou, Dexuan Huo (), Guolin Yu and Ning Dai
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Weitao Su: Institute of Materials Physics, Hangzhou Dianzi University, Hangzhou 310018, P. R. China†Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, P. R. China
Honglei Dou: Institute of Materials Physics, Hangzhou Dianzi University, Hangzhou 310018, P. R. China
Dexuan Huo: Institute of Materials Physics, Hangzhou Dianzi University, Hangzhou 310018, P. R. China
Guolin Yu: #x2021;State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, P. R. China
Ning Dai: #x2021;State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, P. R. China

Surface Review and Letters (SRL), 2016, vol. 23, issue 01, 1-7

Abstract: Localized strain accumulation and related defects strongly affect the performance of optoelectronic detectors. However, characterizing distribution of the localized strain and defects still challenges usability and spatial resolution of many measurements. In current study, the defects and surface strain accumulation of In0.83Al0.17As/In0.83Ga0.17As multilayer detectors are investigated using low-frequency atomic force acoustic microscope (AFAM) and Raman spectroscopy. With AFAM, the strain accumulation and defects can be easily identified and measured with spatial resolution as good as that of atomic force microscope (AFM).

Keywords: Atomic force acoustic microscope; localized strain; In0.83Al0.17As/In0.83Ga0.17As detector (search for similar items in EconPapers)
Date: 2016
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DOI: 10.1142/S0218625X15501103

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