INVESTIGATION OF NEAR-SURFACE DEFECTS INDUCED BY SPIKE RAPID THERMAL ANNEALING IN c-SILICON SOLAR CELLS
Guodong Liu,
Pan Ren,
Dayong Zhang,
Weiping Wang and
Jianfeng Li
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Guodong Liu: Institute of Fluid Physics, CAEP, Mianyang 621900, P. R. China†Key Laboratory of Science and Technology on High Energy Laser, CAEP, Mianyang 621900, P. R. China
Pan Ren: Institute of Fluid Physics, CAEP, Mianyang 621900, P. R. China†Key Laboratory of Science and Technology on High Energy Laser, CAEP, Mianyang 621900, P. R. China
Dayong Zhang: Institute of Fluid Physics, CAEP, Mianyang 621900, P. R. China†Key Laboratory of Science and Technology on High Energy Laser, CAEP, Mianyang 621900, P. R. China
Weiping Wang: Institute of Fluid Physics, CAEP, Mianyang 621900, P. R. China†Key Laboratory of Science and Technology on High Energy Laser, CAEP, Mianyang 621900, P. R. China
Jianfeng Li: Institute of Fluid Physics, CAEP, Mianyang 621900, P. R. China
Surface Review and Letters (SRL), 2016, vol. 23, issue 02, 1-7
Abstract:
The defects induced by a spike rapid thermal annealing (RTA) process in crystalline silicon (c-Si) solar cells were investigated by the photoluminescence (PL) technique and the transmission electron microscopy (TEM), respectively. Dislocation defects were found to form in the near-surface junction region of the monocrystalline Si solar cell after a spike RTA process was performed at 1100∘C. Photo J–V characteristics were measured on the Si solar cell before and after the spike RTA treatments to reveal the effects of defects on the Si cell performances. In addition, the Silvaco device simulation program was used to study the effects of defects density on the cell performances by fitting the experimental data of RTA-treated cells. The results demonstrate that there was an obvious degradation in the Si solar cell performances when the defect density after the spike RTA treatment was above 1×1013cm−3.
Keywords: Solar cell; spike RTA; defects; photocurrent (search for similar items in EconPapers)
Date: 2016
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Persistent link: https://EconPapers.repec.org/RePEc:wsi:srlxxx:v:23:y:2016:i:02:n:s0218625x15501073
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DOI: 10.1142/S0218625X15501073
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