ANGULAR DISTRIBUTION OF TUNGSTEN MATERIAL AND ION FLUX DURING NANOSECOND PULSED LASER DEPOSITION

M. S. Hussain, A. H. Dogar, A. Qayyum and S. A. Abbasi
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M. S. Hussain: Pakistan Institute of Nuclear Science and Technology, Nilore, Islamabad, Pakistan
A. H. Dogar: Pakistan Institute of Nuclear Science and Technology, Nilore, Islamabad, Pakistan
A. Qayyum: Pakistan Institute of Nuclear Science and Technology, Nilore, Islamabad, Pakistan
S. A. Abbasi: Department of Physics, University of Azad Jammu & Kashmir, Muzaffarabad, Pakistan

Surface Review and Letters (SRL), 2016, vol. 23, issue 03, 1-8

Abstract: Tungsten thin films were prepared by pulsed laser deposition (PLD) technique on glass substrates placed at the angles of 0∘ to 70∘ with respect to the target surface normal. Rutherford backscattering Spectrometry (RBS) analysis of the films indicated that about 90% of tungsten material flux is distributed in a cone of 40∘ solid angle while about 54% of it lies even in a narrower cone of 10∘ solid angle. Significant diffusion of tungsten in glass substrate has been observed in the films deposited at smaller angles with respect to target surface normal. Time-of-flight (TOF) measurements performed using Langmuir probe indicated that the most probable ion energy decreases from about 600 to 91eV for variation of θ from 0∘ to 70∘. In general ion energy spread is quite large at all angles investigated here. The enhanced tungsten diffusion in glass substrate observed at smaller angles is most probably due to the higher ion energy and ion assisted recoil implantation of already deposited tungsten.

Keywords: Pulsed laser deposition; tungsten; ion energy; diffusion (search for similar items in EconPapers)
Date: 2016
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DOI: 10.1142/S0218625X16500049

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