SYNTHESIS OF GRAPHENE/DIAMOND DOUBLE-LAYERED STRUCTURE FOR IMPROVING ELECTRON FIELD EMISSION PROPERTIES

Yu Qiao, Ting Qi, Jie Liu, Zhiyong He, Shengwang Yu, Yanyan Shen and Hongjun Hei
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Yu Qiao: Research Institute of Surface Engineering, Taiyuan University of Technology, Taiyuan 030024, P. R. China
Ting Qi: Research Institute of Surface Engineering, Taiyuan University of Technology, Taiyuan 030024, P. R. China
Jie Liu: #x2020;Institute of Microelectronics, Tsinghua University, Beijing 100084, P. R. China‡Tsinghua National Laboratory for Information Science and Technology, Beijing 100084, P. R. China
Zhiyong He: Research Institute of Surface Engineering, Taiyuan University of Technology, Taiyuan 030024, P. R. China
Shengwang Yu: Research Institute of Surface Engineering, Taiyuan University of Technology, Taiyuan 030024, P. R. China
Yanyan Shen: Research Institute of Surface Engineering, Taiyuan University of Technology, Taiyuan 030024, P. R. China
Hongjun Hei: Research Institute of Surface Engineering, Taiyuan University of Technology, Taiyuan 030024, P. R. China

Surface Review and Letters (SRL), 2016, vol. 23, issue 03, 1-8

Abstract: Ultrananocrystalline diamond (UNCD) films on silicon were prepared by microwave plasma chemical vapor deposition (MPCVD) method using argon-rich CH4/H2/Ar plasmas. The graphene sheets synthesized by chemical vapor deposition (CVD) were successfully transferred on to the UNCD surface to fabricate electron field emission (EFE) property-enhanced graphene/UNCD films. The surface morphology, structure and composition of the graphene/UNCD double-layered structures were characterized by scanning electron microscope (SEM), atomic force microscope (AFM), Raman spectroscopy and grazing incidence X-ray diffraction (GXRD). GXRD clearly shows the characteristic diffraction peaks of both diamond and graphene. The Raman spectrum shows the characteristic band of diamond at 1332cm−1 and D, G and 2D bands of graphene at 1360, 1550 and 2610cm−1, respectively. The EFE behavior of the composite films can be turned on at E0=2.2V/μm, attaining a current density of 0.065mA/cm2 at an applied field of 7.3V/μm.

Keywords: EFE properties; ultrananocrystalline diamond; Raman spectroscopy; CVD (search for similar items in EconPapers)
Date: 2016
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DOI: 10.1142/S0218625X16500116

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