COMPARISON OF ELECTRONIC AND OPTICAL PROPERTIES OF GaN MONOLAYER AND BULK STRUCTURE: A FIRST PRINCIPLE STUDY

Muhammad Imran (), Fayyaz Hussain, Muhammad Rashid, Hafeez Ullah, Atif Sattar, Faisal Iqbal and Ejaz Ahmad
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Muhammad Imran: Materials Simulation Research Laboratory (MSRL), Department of Physics, Bahauddin Zakariya University, Multan 60800, Pakistan
Fayyaz Hussain: Materials Simulation Research Laboratory (MSRL), Department of Physics, Bahauddin Zakariya University, Multan 60800, Pakistan†Department of Physics, The Islamia University of Bahawalpur, Bahawalpur, Pakistan
Muhammad Rashid: #x2021;Department of Physics, COMSATS Institute of Information Technology, 44000 Islamabad, Pakistan
Hafeez Ullah: #x2020;Department of Physics, The Islamia University of Bahawalpur, Bahawalpur, Pakistan§Laser and Optronics Laboratory, Department of Physics, Bahauddin Zakariya University, Multan 60800, Pakistan
Atif Sattar: #xB6;Simulation Laboratory Department of Physics, The Islamia University of Bahawalpur 63100, Pakistan
Faisal Iqbal: #x2020;Department of Physics, The Islamia University of Bahawalpur, Bahawalpur, Pakistan
Ejaz Ahmad: #x2225;Materials Simulation Research Laboratory (MSRL), Department of Physics, Bahauddin Zakariya University, Multan 60800, Pakistan

Surface Review and Letters (SRL), 2016, vol. 23, issue 04, 1-6

Abstract: The semiconducting two-dimensional (2D) architectures materials have potential applications in electronics and optics. The design and search of new 2D materials have attracted extensive attention recently. In this study, first principle calculation has been done on 2D gallium nitride (GaN) monolayer with respect to its formation and binding energies. The electronic and optical properties are also investigated. It is found that the single isolated GaN sheet is forming mainly ionic GaN bonds despite a slightly weaker GaN interaction as compared with its bulk counterpart. The dielectric constant value of 2D GaN is smaller as compared to 3D GaN due to less effective electronic screening effect in the layer, which is accompanied by lesser optical adsorption range and suggested to be a promising candidate in electronic and optoelectronic devices.

Keywords: Optical properties of GaN; hybridization; ELF; GaN monolayer (search for similar items in EconPapers)
Date: 2016
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DOI: 10.1142/S0218625X16500268

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