EFFECTS OF ELECTRODE RESISTANCE ON THE DIELECTRIC BEHAVIORS OF Au/BaxSr1−xTiO3/La1.1Sr0.9NiO4 CAPACITORS

Jie Qiu, Guozhen Liu and Jérôme Wolfman
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Jie Qiu: School of Mathematics and Physics, Suzhou University of Science and Technology, Suzhou 215009, Jiangsu Province, P. R. China
Guozhen Liu: School of Mathematics and Physics, Suzhou University of Science and Technology, Suzhou 215009, Jiangsu Province, P. R. China
Jérôme Wolfman: #x2020;Laboratoire GREMAN, UMR 7347 CNRS, Université François Rabelais, Parc de Grandmont 37200 Tours, France

Surface Review and Letters (SRL), 2016, vol. 23, issue 04, 1-7

Abstract: BaxSr1−xTiO3 (0.1≤x≤0.5) (BST) thin films were prepared on La1.1Sr0.9NiO4 (LSNO)/SrTiO3 (STO) structure by combinatorial pulsed laser deposition (comb-PLD). The capacitances of the Au/BST/LSNO capacitors exhibited strong frequency dependence especially when the applied frequency was higher than 10kHz. On the basis of an equivalent circuit model, we presented a theoretical simulation of the relationships between capacitance and frequency for the capacitors with different electrode serial resistances. Based on the fitting results, the observed strong frequency dependence of the measured capacitance at high frequency in our study could be ascribed to the large serial resistance of 750 Ω for oxide electrode LSNO. Further simulation studies found that large serial resistance (1000 Ω) could result in an apparent deviation from the intrinsic dielectric properties especially at high frequencies (>100kHz) for capacitors with capacitances above 1nF. Our results provide useful information for the design of all-oxide electronic devices.

Keywords: Laser deposition; dielectric properties; thin films; ferroelectric materials; electrode resistance (search for similar items in EconPapers)
Date: 2016
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DOI: 10.1142/S0218625X16500281

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