MAXIMUM SECONDARY ELECTRON YIELD AND PARAMETERS OF SECONDARY ELECTRON YIELD OF METALS

Ai-Gen Xie, Han-Sup Uhm, Yun-Yun Chen and Eun-Ha Choi
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Ai-Gen Xie: School of Physics and Optoelectronic Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, P. R. China†Department of Electrical and Biological Physics, Kwangwoon University, 20 Kwangwoon-gil, Nowon-gu, Seoul 139-701, Republic of Korea
Han-Sup Uhm: #x2020;Department of Electrical and Biological Physics, Kwangwoon University, 20 Kwangwoon-gil, Nowon-gu, Seoul 139-701, Republic of Korea
Yun-Yun Chen: School of Physics and Optoelectronic Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, P. R. China
Eun-Ha Choi: #x2020;Department of Electrical and Biological Physics, Kwangwoon University, 20 Kwangwoon-gil, Nowon-gu, Seoul 139-701, Republic of Korea

Surface Review and Letters (SRL), 2016, vol. 23, issue 05, 1-10

Abstract: On the basis of the free-electron model, the energy range of internal secondary electrons, the energy band of a metal, the formula for inelastic mean escape depth, the processes and characteristics of secondary electron emission, the probability of internal secondary electrons reaching surface and passing over the surface barrier into vacuum B as a function of original work function Φ and the distance from Fermi energy to the bottom of the conduction band EF was deduced. According to the characteristics of creation of an excited electron, the definition of average energy required to produce an internal secondary electron ε, the energy range of excited electrons and internal secondary electrons and the energy band of a metal, the formula for expressing ε using the number of valence electron of the atom V, Φ,EF and atomic number Z was obtained. Based on the processes and characteristics of secondary electron emission, several relationships among the parameters of the secondary electron emission and the deduced formulae for B and ε, the formula for expressing maximum secondary electron yield of metals δm using Z, V, back-scattering coefficient r, incident energy of primary electron at which secondary electron yield reaches δm, Φ and EF was deduced and demonstrated to be true. According to the deduced formula for δm and the relationships among δm and several parameters of secondary electron emitter, it can be concluded that high δm values are linked to high V, Z and Φ values, and vice versa. Based on the processes and characteristics of secondary electron emission and the deduced formulae for the B, ε and δm, the influences of surface properties on δm were discussed.

Keywords: Probability; average energy; maximum secondary electron yield (search for similar items in EconPapers)
Date: 2016
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DOI: 10.1142/S0218625X16500396

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