INFLUENCE OF ION BEAM IRRADIATION ON STRUCTURAL, MAGNETIC AND ELECTRICAL CHARACTERISTICS OF Ho-DOPED AlN THIN FILMS

Najam Ul Hassan, Zahid Hussain, M. Naeem, Ishfaq Ahmad Shah, G. Husnain, Ishaq Ahmad and Zaka Ullah
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Najam Ul Hassan: School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, P. R. China†Department of Physics, Federal Urdu University of Arts, Science and Technology, Islamabad 44000, Pakistan
Zahid Hussain: #x2020;Department of Physics, Federal Urdu University of Arts, Science and Technology, Islamabad 44000, Pakistan
M. Naeem: #x2020;Department of Physics, Federal Urdu University of Arts, Science and Technology, Islamabad 44000, Pakistan
Ishfaq Ahmad Shah: School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, P. R. China‡Centre of Excellence in Solid State Physics, University of the Punjab, Lahore 54590, Pakistan
G. Husnain: #xA7;Experimental Physics Laboratories, National Centre for Physics, Quaid-i-Azam University, Islamabad 45320, Pakistan
Ishaq Ahmad: #xA7;Experimental Physics Laboratories, National Centre for Physics, Quaid-i-Azam University, Islamabad 45320, Pakistan
Zaka Ullah: #x2021;Centre of Excellence in Solid State Physics, University of the Punjab, Lahore 54590, Pakistan¶Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, P. R. China

Surface Review and Letters (SRL), 2017, vol. 24, issue 02, 1-7

Abstract: Holmium (Ho)-doped AlN thin films of thicknesses 60, 90 and 300 nm were grown in pure nitrogen atmosphere via RF magnetron sputtering. The deposited thin films were irradiated with protons at a dose of 5×1014 ions/cm2 and the effects of irradiation on structural, magnetic and electrical characteristics of thin films were investigated. Rutherford backscattering spectroscopy (RBS) confirmed the presence of Al, N and Ho in prepared samples. X-ray diffraction analysis showed that crystallinity of the thin films was enhanced after irradiation and thicker films were more crystalline. Atomic force microscopy (AFM) revealed that the surface roughness and porosity of the thin films were increased after irradiation. Magnetic measurements showed that diamagnetic AlN:Ho thin films can be transformed into paramagnetic and ferromagnetic ones via suitable irradiation. The increase in carrier concentrations after irradiation was responsible for tuning the electrical and magnetic characteristics of thin films for applications in various high voltage microelectronic and magnetic devices.

Keywords: AlN:Ho thin films; RF magnetron sputtering; proton irradiation; magnetic and electrical properties (search for similar items in EconPapers)
Date: 2017
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DOI: 10.1142/S0218625X17500214

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