STUDIES ON STRUCTURAL AND RESISTIVE SWITCHING PROPERTIES OF Al/ZnO/Al STRUCTURED RESISTIVE RANDOM ACCESS MEMORY

Hongxia Li, Chen Yiming, Xin Wu, Junhua Xi, Yanwei Huang and Zhenguo Ji
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Hongxia Li: Lab of Electronic Materials and Devices, Hangzhou Dianzi University, Hangzhou 310018, P. R. China
Chen Yiming: Lab of Electronic Materials and Devices, Hangzhou Dianzi University, Hangzhou 310018, P. R. China
Xin Wu: #x2020;College of Mechanical Engineering, Hangzhou Dianzi University, Hangzhou 310018, P. R. China
Junhua Xi: Lab of Electronic Materials and Devices, Hangzhou Dianzi University, Hangzhou 310018, P. R. China
Yanwei Huang: Lab of Electronic Materials and Devices, Hangzhou Dianzi University, Hangzhou 310018, P. R. China
Zhenguo Ji: Lab of Electronic Materials and Devices, Hangzhou Dianzi University, Hangzhou 310018, P. R. China‡State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, P. R. China

Surface Review and Letters (SRL), 2017, vol. 24, issue 04, 1-8

Abstract: Recently, resistive random access memory has been continuously investigated in order to replace the flash memory. In this paper, Al/ZnO/Al structured device was fabricated by magnetron sputtering and vacuum thermal evaporation. Systematic study has been conducted to explore the structural, morphological, and the resistive switching properties of ZnO films with Al metal as both bottom and top electrodes. The resistive switching mechanism of Al/ZnO/Al device was analyzed based on the above study.

Keywords: ZnO film; resistive switching characteristics; Al electrode; XPS (search for similar items in EconPapers)
Date: 2017
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DOI: 10.1142/S0218625X17500482

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