SURFACTANT EFFECT OF In ON THE MOVPE GROWTH OF Al- AND N-POLAR AlN

Qinqin Zhuang, Junyong Kang, Shuping Li and Wei Lin
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Qinqin Zhuang: Fujian Provincial Key Laboratory of Optoelectronic Technology and Devices, School of Optoelectronic and Communication Engineering, Xiamen University of Technology, Xiamen, Fujian 361024, P. R. China
Junyong Kang: #x2020;Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen, Fujian 361005, P. R. China
Shuping Li: #x2020;Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen, Fujian 361005, P. R. China
Wei Lin: #x2020;Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen, Fujian 361005, P. R. China

Surface Review and Letters (SRL), 2017, vol. 24, issue 06, 1-7

Abstract: Al- and N-polar AlN have been grown by metalorganic vapor phase epitaxy (MOVPE) with the assistance of In dopant and characterized by in situ interferometry, ellipsometry, scanning electron microscopy, atomic force microscopy, and X-ray diffractometry. The growth of Al-polar AlN is faster with smoother surfaces than the N-polar ones, which is explained by theoretical calculations. The surfactant effect of In is confirmed by improving the growth rate and surface flatness without getting into the epilayer. Additionally, In is also favorable for reducing the density of dislocations and improving the crystalline quality, especially that of Al-polar AlN. The results suggest that using In surfactant to grow the Al-polar AlN epilayer leads to a better crystal quality under proper pre-growth treatments, low- and high-temperature AlN growth conditions.

Keywords: AlN; surfactant; MOVPE; growth (search for similar items in EconPapers)
Date: 2017
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DOI: 10.1142/S0218625X17500810

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