GROWTH OF RF SPUTTERED NiO FILMS ON DIFFERENT SUBSTRATES — A COMPARATIVE STUDY

Anas A. Ahmed, Mutharasu Devarajan and Naveed Afzal
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Anas A. Ahmed: School of Physics, Universiti Sains Malaysia (USM) 11800, Pulau Pinang, Malaysia
Mutharasu Devarajan: School of Physics, Universiti Sains Malaysia (USM) 11800, Pulau Pinang, Malaysia
Naveed Afzal: School of Physics, Universiti Sains Malaysia (USM) 11800, Pulau Pinang, Malaysia

Surface Review and Letters (SRL), 2017, vol. 24, issue 07, 1-8

Abstract: This work explores the structural, surface and optical properties of NiO films grown on Si, GaAs, PET and glass substrates. The NiO films were deposited on these substrates under same conditions by using radiofrequency (RF) magnetron sputtering of NiO target at 100∘C. The structural study by X-ray diffraction (XRD) showed the existence of (200) and (220) oriented NiO peaks on all the substrates. The preferred orientation of NiO films on Si, GaAs and glass was along (200) plane whereas the film grown on PET was observed to be oriented along (220) plane. The crystallite size of NiO on GaAs was the largest among the other substrates. The RMS surface roughness on PET was higher as compared to the other substrates. The band gap of NiO films grown on glass and PET was estimated from UV–Vis transmittance spectroscopy whereas the UV–Vis reflection spectroscopy was carried out to find out the band gap of NiO grown on GaAs and Si substrates. The band gap of NiO on PET was higher than its band gap obtained on other substrates. The results obtained on properties of NiO films on different substrates were correlated with each other.

Keywords: NiO; RF sputtering; semiconductor; structural parameters; surface roughness; band gap (search for similar items in EconPapers)
Date: 2017
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DOI: 10.1142/S0218625X17500962

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