TEMPERATURE DEPENDENCE ON THE MORPHOLOGICAL EVOLUTION OF DILUTE InAsBi/GaAs NANOSTRUCTURES GROWN BY METALORGANIC VAPOR PHASE EPITAXY

R. Boussaha, T. Mzoughi, H. Fitouri (), A. Rebey and B. El Jani ()
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R. Boussaha: Faculty of Sciences, Unité de Recherche sur les Hétéro-Epitaxies et Applications, University of Monastir, 5019, Tunisia
T. Mzoughi: Faculty of Sciences, Unité de Recherche sur les Hétéro-Epitaxies et Applications, University of Monastir, 5019, Tunisia
H. Fitouri: Faculty of Sciences, Unité de Recherche sur les Hétéro-Epitaxies et Applications, University of Monastir, 5019, Tunisia
A. Rebey: Faculty of Sciences, Unité de Recherche sur les Hétéro-Epitaxies et Applications, University of Monastir, 5019, Tunisia
B. El Jani: Faculty of Sciences, Unité de Recherche sur les Hétéro-Epitaxies et Applications, University of Monastir, 5019, Tunisia

Surface Review and Letters (SRL), 2017, vol. 24, issue 08, 1-7

Abstract: In this work, we discuss the growth of dilute InAsBi nanostructures grown by metalorganic vapor phase epitaxy on GaAs substrates. The surface morphology of InAsBi nanostructures is carefully investigated, as a function of the growth temperature, by scanning electronic microscopy and atomic force microscopy. (004) High-resolution X-ray diffraction configuration has been used to characterize the crystalline quality and Bi incorporation in the InAsBi films. Low temperature and low Bi flow favor the formation of elongated nanostructures during growth. We give a quantitative description of the elemental processes for the formation of these nanostructures. Our description is based on the Tersoff and Tromp theoretical model.

Keywords: Bismuth; InAsBi nanostructures; growth kinetics; MOVPE (search for similar items in EconPapers)
Date: 2017
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DOI: 10.1142/S0218625X17501050

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