SURFACE POTENTIAL DISTRIBUTION MODEL BASED ON ANALYTICAL CHANNEL POTENTIAL APPROXIMATION FOR ULTRA-THIN BODY POLY-SI THIN FILM TRANSISTORS IN LINEAR REGION

Zhen Zhu and Junhao Chu
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Zhen Zhu: Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241, P. R. China2School of Electronics and Information Engineering, Suzhou Vocational University, Suzhou 215104, P. R. China
Junhao Chu: Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241, P. R. China

Surface Review and Letters (SRL), 2017, vol. 24, issue 08, 1-10

Abstract: For ultra-thin body polycrystalline silicon thin film transistors, the surface potential distribution model, in the linear region, based on the analytical channel potential (CP) approximation is presented without or with the interface charge, respectively. For the purpose of simplifying the process of the solution and with the merit of the clear physical picture, both the surface potential distribution models in the linear region are developed, attributed to the deduction of the analytical CP approximation, by solving one-dimensional Poisson’s equation and applying the Gauss’s law at the poly-Si/oxide interface. Furthermore, the quantitative conditions for the model validity are also developed for both surface potential distribution models. Under these proposed quantitative conditions, both models are verified by the two-dimensional-device simulation on the normalized channel distance under various gate voltages, drain voltages, channel lengths and various areal interface charge densities for the consideration of the interface charge.

Keywords: Surface potential distribution model; analytical channel potential approximation; ultra-thin body polycrystalline silicon thin film transistors (UTB poly-Si TFTs); quantitative model valid condition; linear region; interface charge (search for similar items in EconPapers)
Date: 2017
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DOI: 10.1142/S0218625X17501086

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