THE LASER-ASSISTED FIELD EFFECT TRANSISTOR GAS SENSOR BASED ON MORPHOLOGICAL ZINC-EXCITED TIN-DOPED In2O3 NANOWIRES

Mohsen Shariati and Fariba Khosravinejad
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Mohsen Shariati: Institute for Nanoscience and Nanotechnology, Sharif University of Technology, Tehran, P. O. Box 14588-89694, Iran
Fariba Khosravinejad: #x2020;Biology Department, Faculty of Science, Roudehen Branch, Islamic Azad University, Roudehen, Iran

Surface Review and Letters (SRL), 2017, vol. 24, issue 08, 1-11

Abstract: The gas nanosensor of indium oxide nanowires in laser assisted approach, doped with tin and zinc for gas sensing and 1D growth purposes respectively, was reported. The nanowires were very sensitive to H2S gas in low concentration of 20ppb gas at room temperature. The fast dynamic intensive and sensitive response to gas was in a few seconds with an on/off sensitivity ratio of around 10. The square cross-section indium oxide nanowires were fabricated through physical vapor deposition (PVD) mechanism and annealing approach. The field emission scanning electron microscopy (FESEM) observations indicated that the annealing temperature was vital in nanostructures’ morphology. The fabricated nanowires for the optimized annealing temperature in applied growth technique were around 60nm in diameter.

Keywords: Nanowires; doping; physical vapor deposition processes; semiconducting indium compound; field effect transistor; gas sensor (search for similar items in EconPapers)
Date: 2017
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DOI: 10.1142/S0218625X1750113X

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