EFFECTS OF THE MIXED Cu/O LAYER ON THE TRANSPORT PROPERTIES OF Cu/EuO-BASED TUNNEL JUNCTIONS

C. J. Dai, X. H. Yan, Y. Xiao, J. R. Yuan, M. X. Bi and J. S. Liu
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C. J. Dai: College of Science, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, Jiangsu, P. R. China‡Department of Mathematics and Physics, Nanjing Institute of Technology, Nanjing 211167, Jiangsu, P. R. China
X. H. Yan: College of Science, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, Jiangsu, P. R. China†School of Material Science and Engineering, Jiangsu University, Zhenjiang, 212013, Jiangsu, P. R. China§College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210046, Jiangsu, P. R. China¶Key Laboratory of Radio Frequency and Micro-Nano, Electronics of Jiangsu Province, Nanjing 210023, Jiangsu, P. R. China
Y. Xiao: College of Science, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, Jiangsu, P. R. China
J. R. Yuan: College of Science, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, Jiangsu, P. R. China
M. X. Bi: College of Science, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, Jiangsu, P. R. China
J. S. Liu: #x2020;School of Material Science and Engineering, Jiangsu University, Zhenjiang, 212013, Jiangsu, P. R. China

Surface Review and Letters (SRL), 2017, vol. 24, issue 08, 1-9

Abstract: The spin-dependent transport properties of Cu/EuO-based tunnel junctions are investigated by means of the first-principle calculations combined with the non-equilibrium Green’s function (NEGF) method. It is found that the Cu/EuO-based junctions exhibit excellent spin-filtering effect. Furthermore, the mixed Cu/O layer enhances the tunneling of the majority spin through the EuO barrier for the junctions with Cu/O layers due to the fact that the valance-band maximum of the Eu-4f states shifts to high energies with respect to the Fermi level for these junctions. These results permit the existence of the mixed Cu/O layer in Cu/EuO-based tunnel junctions and promote future applications of these tunnel junctions in spintronic devices.

Keywords: Cu/EuO/Cu tunneling junction; Cu oxidation; spin filter; first-principle calculation (search for similar items in EconPapers)
Date: 2017
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DOI: 10.1142/S0218625X17501207

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