STRUCTURAL AND OPTOELECTRONIC PROPERTIES OF SnO2 THIN FILMS DOPED BY GROUP-IA ELEMENTS

Hadj Benhebal, Bedhiaf Benrabah, Aek Ammari, Yacine Madoune and Stéphanie D. Lambert
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Hadj Benhebal: Department of Chemistry, Ibn-Khaldoun University of Tiaret, Tiaret 14000, Algeria
Bedhiaf Benrabah: #x2020;Laboratory of Physical Engineering, Ibn-Khaldoun University of Tiaret, Tiaret 14000, Algeria
Aek Ammari: #x2020;Laboratory of Physical Engineering, Ibn-Khaldoun University of Tiaret, Tiaret 14000, Algeria
Yacine Madoune: #x2020;Laboratory of Physical Engineering, Ibn-Khaldoun University of Tiaret, Tiaret 14000, Algeria
Stéphanie D. Lambert: #x2021;Laboratory of Chemical Engineering, B6a, University of Liège, B-4000, Liège, Belgium

Surface Review and Letters (SRL), 2017, vol. 24, issue Supp01, 1-6

Abstract: This paper presents the results of an experimental work devoted to the synthesis and the characterization of tin dioxide (SnO2) thin layers doped with group-IA elements (Li, Na and K). The materials were synthesized by the sol–gel method and deposited by dip-coating, using tin (II) chloride dihydrate as a source of tin and absolute ethyl alcohol as solvent. Thin films prepared were characterized by several techniques including X-ray diffraction (XRD), scanning electron microscopy (SEM), infrared spectroscopy (IR), visible and ultraviolet spectroscopy and complex impedance method. The results obtained show that the materials kept their tetragonal rutile structure with preferred orientation of (101), whereas doping leads to a reduction of their energy band gap. The complex impedance analysis suggests that the different processes occurring at the electrode interface are modeled by an electrical circuit not affected by the doping.

Keywords: Tin dioxide; thin films; sol–gel; metal-doping; group-IA elements (search for similar items in EconPapers)
Date: 2017
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DOI: 10.1142/S0218625X18500075

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