FORMULAE FOR MAXIMUM ESCAPE DEPTH OF REDIFFUSED ELECTRONS AND BACKSCATTERING COEFFICIENT OF METAL FILMS

A. G. Xie (), H. Y. Liu, Y. Yu, Y. Q. Xia and T. Y. Wan
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A. G. Xie: School of Physics and Optoelectronic Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, P. R. China
H. Y. Liu: School of Physics and Optoelectronic Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, P. R. China
Y. Yu: School of Physics and Optoelectronic Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, P. R. China
Y. Q. Xia: School of Physics and Optoelectronic Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, P. R. China
T. Y. Wan: School of Physics and Optoelectronic Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, P. R. China

Surface Review and Letters (SRL), 2018, vol. 25, issue 02, 1-6

Abstract: Based on the experimental maximum escape depth S(Wp0, Z) of rediffused electrons from atomic number Z metal at incident energy of primary electron Wp0, the relationship among S(Wp0, Z), Wp0 and Z in the energy range of 9.3keV≦Wp0≦40keV was obtained and proved to be true by experimental data. According to the experimental results of rediffused electrons, the characteristics of secondary electron emission, relationships among parameters of rediffused electrons and the main processes of rediffused electrons emission, the formula for Wp0 backscattering coefficient η(Wp0, Z, t) of Z metal films with film thickness t as a function of t, Z and was deduced, and the results were analyzed. It is concluded that the deduced formula for η(Wp0, Z, t) can be used to calculate η(Wp0, Z, t) in the energy range of 9.3keV≦Wp0≦40keV. The secondary electron yield δ from thin films are applied in more and more fields such as electronic information technology, accelerator and space flight, and η(Wp0, Z, t) is an important parameter of δ from Z metal films. So deducing the formula for η(Wp0, Z, t) in this study is necessary.

Keywords: Maximum escape depth of rediffused electrons; backscattering coefficient; atomic number; incident energy of primary electron; film thickness (search for similar items in EconPapers)
Date: 2018
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DOI: 10.1142/S0218625X18500476

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