THE STUDY OF HIGH DIELECTRIC CONSTANT MECHANISM OF La-DOPED Ba0.67Sr0.33TiO3 CERAMICS

Jing Xu, Bo He and Han Xing Liu
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Jing Xu: Instrumental Analysis and Research Center, Shanghai University, Shanghai 200444, P. R. China
Bo He: #x2020;Department of Applied Physics, Donghua University, Shanghai 201620, P. R. China
Han Xing Liu: #x2021;State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, 122 Luo Shi Road, Wuhan 430070, P. R. China

Surface Review and Letters (SRL), 2018, vol. 25, issue 02, 1-6

Abstract: It is a common and effective method to enhance the dielectric properties of BST ceramics by adding rare-earth elements. In this paper, it is important to analyze the cause of the high dielectric constant behavior of La-doped BST ceramics. The results show that proper rare earth La dopant (0.2≤x≤0.7) may greatly increase the dielectric constant of BST ceramics, and also improve the temperature stability, evidently. According to the current–voltage (J–V) characteristics, the proper La-doped BST ceramics may reach the better semiconductivity, with the decrease and increase in La doping, the ceramics are insulators. By using the Schottky barrier model and electric microstructure model to find the surface or grain boundary potential barrier height, the width of the depletion layer and grain size do play an important role in impacting the dielectric constant.

Keywords: Ba0.67Sr0.33TiO3; high permittivity; semiconductivity; barrier (search for similar items in EconPapers)
Date: 2018
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DOI: 10.1142/S0218625X18500567

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