BEHAVIORS OF PHOTOCONDUCTIVE DETECTORS BASED ON MAPbI3 PEROVSKITE FILMS

Genyuan Yu, Lisha Feng, Lu Meng, Zhizhen Ye and Jianguo Lu
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Genyuan Yu: State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
Lisha Feng: State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
Lu Meng: State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
Zhizhen Ye: State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
Jianguo Lu: State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China

Surface Review and Letters (SRL), 2018, vol. 25, issue 02, 1-5

Abstract: The CH3NH3PbI3 films were synthesized by a facile low-cost solution process and were used to fabricate photoconductive detectors. The perovskite photodetector is very sensitive to light, with a high responsivity of 5.51mA/W and a sensitivity of 50 at 5V under 350nm light illumination. The device exhibits the fast rise and decay processes with similar appearance, and the relaxation time constants are 270 and 300ms, respectively. The photo-current shows an evident saturation, without further increase for prolonging the illumination period. The perovskite photodetectors display high responsive performances to short-wavelength lights. This study is expected to provide a fundamental knowledge of perovskite photodetectors with high speed and repeatability for practical applications.

Keywords: Organometal halide perovskites; photoconductive detectors; fast response; repeatability (search for similar items in EconPapers)
Date: 2018
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DOI: 10.1142/S0218625X18500579

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