MICROSTRUCTURE AND DIELECTRIC PROPERTIES OF SILICON CARBONITRIDE DIELECTRIC BARRIER FILMS DEPOSITED BY SPUTTERING

Yinqiao Peng, Jicheng Zhou, Jiehong Gong, Qinrong Yu and Guibin Lei
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Yinqiao Peng: School of Electronics and Information Engineering, GuangDong Ocean University, Zhanjiang 524088, P. R. China
Jicheng Zhou: School of Energy Science and Engineering, Central South University, Changsha 410083, P. R. China
Jiehong Gong: Forty-Eighth Research Institute of China Electronics Technology Group Corporation, Changsha 410111, P. R. China
Qinrong Yu: Forty-Eighth Research Institute of China Electronics Technology Group Corporation, Changsha 410111, P. R. China
Guibin Lei: Guangdong Province Key Laboratory for Coastal Ocean Variation and Disaster Prediction, GuangDong Ocean University, Zhanjiang 524088, P. R. China

Surface Review and Letters (SRL), 2018, vol. 25, issue 03, 1-6

Abstract: Silicon carbon nitride (SiCN) films were prepared on silicon substrate by reactive magnetron sputtering of a sintered silicon carbide target in a mixture of argon, nitrogen and acetylene. Detailed studies including energy dispersive spectrometer, atomic force microscope, X-ray diffraction, Fourier transformed infrared spectrometry and C–V measuring instrument were performed. The as-deposited SiCN films do not exhibit obvious crystalline phase, and the SiCN films annealed at 600∘C show SiC crystal and graphite carbon. The SiCN films mainly consist of Si–N, Si–C, Si–O, C–C, C≡N, Si–Hn and N–Hn bonds, and increasing C2H2 flow rate promotes the formation of C–C, N–Hn and Si–N bonds. The SiCN film with low dielectric constant of 3.8 and compact structure was successfully prepared.

Keywords: Silicon carbonitride; sputtering; microstructure; dielectric constant; dielectric barrier (search for similar items in EconPapers)
Date: 2018
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DOI: 10.1142/S0218625X18500658

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