CURRENT–VOLTAGE CHARACTERISTICS OF THERMALLY ANNEALED Ni/n-GaAs SCHOTTKY CONTACTS

Nezir Yildirim (), Abdulmecit Turut and Hulya Dogan ()
Additional contact information
Nezir Yildirim: Department of Physics, Faculty of Sciences and Arts, Bingöl University, Bingöl 12000, Turkey
Abdulmecit Turut: Engineering Physics Department, Faculty of Engineering and Natural Sciences, Istanbul Medeniyet University, Istanbul TR-34700, Turkey
Hulya Dogan: Department of Electric and Electronics Engineering, Faculty of Engineering, Cumhuriyet University, Sivas 58140, Turkey

Surface Review and Letters (SRL), 2018, vol. 25, issue 04, 1-9

Abstract: The Schottky barrier type Ni/n-GaAs contacts fabricated by us were thermally annealed at 600∘C and 700∘C for 1min. The apparent barrier height Φap and ideality factor of the diodes were calculated from the forward bias current–voltage characteristic in 60–320K range. The Φap values for the nonannealed and 600∘C and 700∘C annealed diodes were obtained as 0.80, 0.81 and 0.67eV at 300K, respectively. Thus, it has been concluded that the reduced barrier due to the thermal annealing at 700∘C promises some device applications. The current preferentially flows through the lowest barrier height (BH) with the temperature due to the BH inhomogeneities. Therefore, it was seen that the Φap versus (2kT)−1 plots for the nonannealed and annealed diodes showed the linear behavior according to Gaussian distributions.

Keywords: Metal-semiconductor contacts; rectifying behavior; Schottky barrier; thermal annealing; measurement temperature; GaAs semiconductor (search for similar items in EconPapers)
Date: 2018
References: View complete reference list from CitEc
Citations:

Downloads: (external link)
http://www.worldscientific.com/doi/abs/10.1142/S0218625X18500828
Access to full text is restricted to subscribers

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:wsi:srlxxx:v:25:y:2018:i:04:n:s0218625x18500828

Ordering information: This journal article can be ordered from

DOI: 10.1142/S0218625X18500828

Access Statistics for this article

Surface Review and Letters (SRL) is currently edited by S Y Tong

More articles in Surface Review and Letters (SRL) from World Scientific Publishing Co. Pte. Ltd.
Bibliographic data for series maintained by Tai Tone Lim ().