ELECTRICAL CONDUCTING AND MECHANISM OF OXYGEN-DEFICIENT TIN OXIDE FILMS DEPOSITED BY RF MAGNETRON SPUTTERING AT VARIOUS O2/Ar RATIOS

Qi Wang, Chengbiao Wang, Changchun Lv, Yang Wang, Zhijian Peng () and Xiuli Fu ()
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Qi Wang: School of Engineering and Technology, China University of Geosciences, Beijing 100083, P. R. China†School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, P. R. China
Chengbiao Wang: School of Engineering and Technology, China University of Geosciences, Beijing 100083, P. R. China
Changchun Lv: School of Engineering and Technology, China University of Geosciences, Beijing 100083, P. R. China
Yang Wang: School of Engineering and Technology, China University of Geosciences, Beijing 100083, P. R. China†School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, P. R. China
Zhijian Peng: School of Engineering and Technology, China University of Geosciences, Beijing 100083, P. R. China
Xiuli Fu: School of Engineering and Technology, China University of Geosciences, Beijing 100083, P. R. China

Surface Review and Letters (SRL), 2018, vol. 25, issue 04, 1-10

Abstract: Oxygen-deficient tin oxide thin films were prepared by radiofrequency magnetron sputtering with a sintered non-stoichiometric tin oxide ceramic target under an atmosphere of various ratios of O2/Ar from pure Ar to 1:1. X-ray diffraction analysis showed that the thin films were polycrystalline with relatively strong (1 1 0), (1 0 1) and (2 1 1) diffraction peaks. Scanning electron microscopy observation revealed that the thin films prepared at different O2/Ar ratios were all of relatively dense and homogeneous structure. With increasing O2/Ar ratio, the grain size of the films decreased slightly, and their chemical composition became close to the stoichiometric SnO2; but the deposition rate as well as film thickness increased first and then decreased sharply. It was revealed that the main defect in obtained films was oxygen vacancy (VO), and as the O2/Ar ratio increased, the concentration of VO fell down monotonously, which would lead to an increased electrical resistivity.

Keywords: Radiofrequency magnetron sputtering; tin oxide films; O2/Ar ratio; defect (search for similar items in EconPapers)
Date: 2018
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DOI: 10.1142/S0218625X18500932

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