PASSIVATION OF CRYSTALLINE SILICON ON POROUS SILICON SURFACE TREATED BY ERBIUM OXIDES (Er2O3) FOR ENHANCEMENT THE PHOTOVOLTAIC PROPERTIES

Zouhier Bouznif, Ahmed Zarroug, Zied Ben Hamed, Lotfi Derbali and Hatem Ezzaouia
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Zouhier Bouznif: Laboratory of Semiconductors, Nanostructures and Advanced Technology (LSNTA), Center for Research and Technology Energy, Tourist Route Soliman, BP 95, 2050 Hammam-Lif, Tunisia
Ahmed Zarroug: Laboratory of Semiconductors, Nanostructures and Advanced Technology (LSNTA), Center for Research and Technology Energy, Tourist Route Soliman, BP 95, 2050 Hammam-Lif, Tunisia†Ecole Supérieure Privée d’Ingénieurs et des Etudes Technologiques, Université arabe des Sciences, Tunis, Tunisia
Zied Ben Hamed: #x2021;Laboratory of Advanced Materials and Quantum Phenomena, Tunis-El Manar University, Department of Physics, Tunis, Tunisia
Lotfi Derbali: Laboratory of Semiconductors, Nanostructures and Advanced Technology (LSNTA), Center for Research and Technology Energy, Tourist Route Soliman, BP 95, 2050 Hammam-Lif, Tunisia
Hatem Ezzaouia: Laboratory of Semiconductors, Nanostructures and Advanced Technology (LSNTA), Center for Research and Technology Energy, Tourist Route Soliman, BP 95, 2050 Hammam-Lif, Tunisia

Surface Review and Letters (SRL), 2018, vol. 25, issue 05, 1-8

Abstract: The aim of this paper is to study the effect of erbium oxide (Er2O3) on porous silicon (PS) wafers used for photovoltaic application. An immersion of PS wafers in Er2O3 solution can be used to enhance light trapping and form an efficient surface by passivation process. PS was prepared by the stain-etching method and doped by Er species. In fact, the topography was investigated by the scanning electron microscope (SEM). In addition, the spectral behaviors of the reflectivity and the photoluminescence were discussed. The dependence of minority carrier lifetime was evaluated by means of the Quasi-Steady-State Photoconductance technique (QSSPC). Besides, an enhancement in lifetime was observed. A framework is provided for estimating an efficiency improvement in studied films which will help to guide the development of improved energy-efficient.

Keywords: Porous silicon; erbium oxides (Er2O3); surface passivation; antireflection coating; minority carrier lifetime; photoluminescence (search for similar items in EconPapers)
Date: 2018
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DOI: 10.1142/S0218625X18500993

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